Loading…

MoSe2–Cu2S Vertical p–n Nanoheterostructures for High-Performance Photodetectors

Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper int...

Full description

Saved in:
Bibliographic Details
Published in:ACS applied materials & interfaces 2019-01, Vol.11 (4), p.4074-4083
Main Authors: Hassan, Md. Samim, Bera, Susnata, Gupta, Divya, Ray, Samit K, Sapra, Sameer
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 4083
container_issue 4
container_start_page 4074
container_title ACS applied materials & interfaces
container_volume 11
creator Hassan, Md. Samim
Bera, Susnata
Gupta, Divya
Ray, Samit K
Sapra, Sameer
description Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper interfacial contacts has been a challenging task. Here, we develop a colloidal synthetic route for the design of MoSe2–Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p–n junction having plasmonic characteristics. These MoSe2–Cu2S nanoheterostructures are used to fabricate photodetectors with superior photoresponse characteristics. The fabricated device exhibits a broad-band spectral photoresponse over the visible to near-infrared range with a peak responsivity of 410 mA W–1 at −2.0 V and over 3000-fold photo-to-dark current ratio. The superior device performance of MoSe2–Cu2S over only MoSe2 devices is due to the combined effect of the formation of the p–n junction, pronounced light–matter interactions, and passivation of surface defects. This study would pave the way for designing a new class of nanoheterostructured materials for their potential applications in next-generation photonic devices.
doi_str_mv 10.1021/acsami.8b16205
format article
fullrecord <record><control><sourceid>proquest_acs_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_2165660283</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2165660283</sourcerecordid><originalsourceid>FETCH-LOGICAL-a223t-e7c1783f0d3345e490285a17c33196dfdb5e21950b9281fdc522bed32712ce4f3</originalsourceid><addsrcrecordid>eNo9kM1KAzEUhYMoWKtb17MUYWpyk8zPUoq2QtVCq9uQydyxU6aTmmT2voNv6JMYaXF1D5ePw-Ej5JrRCaPA7rTxetdOioplQOUJGbFSiLQACaf_WYhzcuH9ltKMR2hE1s92hfDz9T0dYJW8owut0V2yj58-edG93WBAZ31wgwmDQ5801iXz9mOTLtHFvNO9wWS5scHWETXBOn9Jzhrdebw63jF5e3xYT-fp4nX2NL1fpBqAhxRzw_KCN7TmXEgUJYVCapYbzlmZ1U1dSQRWSlqVULCmNhKgwppDzsCgaPiY3Bx6985-DuiD2rXeYNfpHu3gFbBMZlls5RG9PaDRktrawfVxmGJU_alTB3XqqI7_AoulZKY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2165660283</pqid></control><display><type>article</type><title>MoSe2–Cu2S Vertical p–n Nanoheterostructures for High-Performance Photodetectors</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read &amp; Publish Agreement 2022-2024 (Reading list)</source><creator>Hassan, Md. Samim ; Bera, Susnata ; Gupta, Divya ; Ray, Samit K ; Sapra, Sameer</creator><creatorcontrib>Hassan, Md. Samim ; Bera, Susnata ; Gupta, Divya ; Ray, Samit K ; Sapra, Sameer</creatorcontrib><description>Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper interfacial contacts has been a challenging task. Here, we develop a colloidal synthetic route for the design of MoSe2–Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p–n junction having plasmonic characteristics. These MoSe2–Cu2S nanoheterostructures are used to fabricate photodetectors with superior photoresponse characteristics. The fabricated device exhibits a broad-band spectral photoresponse over the visible to near-infrared range with a peak responsivity of 410 mA W–1 at −2.0 V and over 3000-fold photo-to-dark current ratio. The superior device performance of MoSe2–Cu2S over only MoSe2 devices is due to the combined effect of the formation of the p–n junction, pronounced light–matter interactions, and passivation of surface defects. This study would pave the way for designing a new class of nanoheterostructured materials for their potential applications in next-generation photonic devices.</description><identifier>ISSN: 1944-8244</identifier><identifier>EISSN: 1944-8252</identifier><identifier>DOI: 10.1021/acsami.8b16205</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>ACS applied materials &amp; interfaces, 2019-01, Vol.11 (4), p.4074-4083</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-5058-5540 ; 0000-0002-1778-2884 ; 0000-0002-8099-6690</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Hassan, Md. Samim</creatorcontrib><creatorcontrib>Bera, Susnata</creatorcontrib><creatorcontrib>Gupta, Divya</creatorcontrib><creatorcontrib>Ray, Samit K</creatorcontrib><creatorcontrib>Sapra, Sameer</creatorcontrib><title>MoSe2–Cu2S Vertical p–n Nanoheterostructures for High-Performance Photodetectors</title><title>ACS applied materials &amp; interfaces</title><addtitle>ACS Appl. Mater. Interfaces</addtitle><description>Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper interfacial contacts has been a challenging task. Here, we develop a colloidal synthetic route for the design of MoSe2–Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p–n junction having plasmonic characteristics. These MoSe2–Cu2S nanoheterostructures are used to fabricate photodetectors with superior photoresponse characteristics. The fabricated device exhibits a broad-band spectral photoresponse over the visible to near-infrared range with a peak responsivity of 410 mA W–1 at −2.0 V and over 3000-fold photo-to-dark current ratio. The superior device performance of MoSe2–Cu2S over only MoSe2 devices is due to the combined effect of the formation of the p–n junction, pronounced light–matter interactions, and passivation of surface defects. This study would pave the way for designing a new class of nanoheterostructured materials for their potential applications in next-generation photonic devices.</description><issn>1944-8244</issn><issn>1944-8252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KAzEUhYMoWKtb17MUYWpyk8zPUoq2QtVCq9uQydyxU6aTmmT2voNv6JMYaXF1D5ePw-Ej5JrRCaPA7rTxetdOioplQOUJGbFSiLQACaf_WYhzcuH9ltKMR2hE1s92hfDz9T0dYJW8owut0V2yj58-edG93WBAZ31wgwmDQ5801iXz9mOTLtHFvNO9wWS5scHWETXBOn9Jzhrdebw63jF5e3xYT-fp4nX2NL1fpBqAhxRzw_KCN7TmXEgUJYVCapYbzlmZ1U1dSQRWSlqVULCmNhKgwppDzsCgaPiY3Bx6985-DuiD2rXeYNfpHu3gFbBMZlls5RG9PaDRktrawfVxmGJU_alTB3XqqI7_AoulZKY</recordid><startdate>20190130</startdate><enddate>20190130</enddate><creator>Hassan, Md. Samim</creator><creator>Bera, Susnata</creator><creator>Gupta, Divya</creator><creator>Ray, Samit K</creator><creator>Sapra, Sameer</creator><general>American Chemical Society</general><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-5058-5540</orcidid><orcidid>https://orcid.org/0000-0002-1778-2884</orcidid><orcidid>https://orcid.org/0000-0002-8099-6690</orcidid></search><sort><creationdate>20190130</creationdate><title>MoSe2–Cu2S Vertical p–n Nanoheterostructures for High-Performance Photodetectors</title><author>Hassan, Md. Samim ; Bera, Susnata ; Gupta, Divya ; Ray, Samit K ; Sapra, Sameer</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a223t-e7c1783f0d3345e490285a17c33196dfdb5e21950b9281fdc522bed32712ce4f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hassan, Md. Samim</creatorcontrib><creatorcontrib>Bera, Susnata</creatorcontrib><creatorcontrib>Gupta, Divya</creatorcontrib><creatorcontrib>Ray, Samit K</creatorcontrib><creatorcontrib>Sapra, Sameer</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>ACS applied materials &amp; interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hassan, Md. Samim</au><au>Bera, Susnata</au><au>Gupta, Divya</au><au>Ray, Samit K</au><au>Sapra, Sameer</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MoSe2–Cu2S Vertical p–n Nanoheterostructures for High-Performance Photodetectors</atitle><jtitle>ACS applied materials &amp; interfaces</jtitle><addtitle>ACS Appl. Mater. Interfaces</addtitle><date>2019-01-30</date><risdate>2019</risdate><volume>11</volume><issue>4</issue><spage>4074</spage><epage>4083</epage><pages>4074-4083</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>Heterostructures based on atomically thin two-dimensional layered transition metal dichalcogenides are highly promising for optoelectronic device applications owing to their tunable optical and electronic properties. However, the synthesis of heterostructures with desired materials having proper interfacial contacts has been a challenging task. Here, we develop a colloidal synthetic route for the design of MoSe2–Cu2S nanoheterostructures, where the Cu2S islands grow vertically on top of the defect sites present on the MoSe2 surface, thereby forming a vertical p–n junction having plasmonic characteristics. These MoSe2–Cu2S nanoheterostructures are used to fabricate photodetectors with superior photoresponse characteristics. The fabricated device exhibits a broad-band spectral photoresponse over the visible to near-infrared range with a peak responsivity of 410 mA W–1 at −2.0 V and over 3000-fold photo-to-dark current ratio. The superior device performance of MoSe2–Cu2S over only MoSe2 devices is due to the combined effect of the formation of the p–n junction, pronounced light–matter interactions, and passivation of surface defects. This study would pave the way for designing a new class of nanoheterostructured materials for their potential applications in next-generation photonic devices.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsami.8b16205</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-5058-5540</orcidid><orcidid>https://orcid.org/0000-0002-1778-2884</orcidid><orcidid>https://orcid.org/0000-0002-8099-6690</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1944-8244
ispartof ACS applied materials & interfaces, 2019-01, Vol.11 (4), p.4074-4083
issn 1944-8244
1944-8252
language eng
recordid cdi_proquest_miscellaneous_2165660283
source American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list)
title MoSe2–Cu2S Vertical p–n Nanoheterostructures for High-Performance Photodetectors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T13%3A33%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_acs_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=MoSe2%E2%80%93Cu2S%20Vertical%20p%E2%80%93n%20Nanoheterostructures%20for%20High-Performance%20Photodetectors&rft.jtitle=ACS%20applied%20materials%20&%20interfaces&rft.au=Hassan,%20Md.%20Samim&rft.date=2019-01-30&rft.volume=11&rft.issue=4&rft.spage=4074&rft.epage=4083&rft.pages=4074-4083&rft.issn=1944-8244&rft.eissn=1944-8252&rft_id=info:doi/10.1021/acsami.8b16205&rft_dat=%3Cproquest_acs_j%3E2165660283%3C/proquest_acs_j%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a223t-e7c1783f0d3345e490285a17c33196dfdb5e21950b9281fdc522bed32712ce4f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2165660283&rft_id=info:pmid/&rfr_iscdi=true