Solution-Processed Organic Field-Effect Transistors with High Performance and Stability on Paper Substrates

• Published in: ACS applied materials & interfaces 2019-02, Vol.11 (8), p.8357-8364
• Main Authors: Raghuwanshi, Vivek, Bharti, Deepak, Mahato, Ajay Kumar, Varun, Ishan, Tiwari, Shree Prakash
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.8b21404

High-performance operationally stable organic field-effect transistors were successfully fabricated on a PowerCoat HD 230 paper substrate with a TIPS-pentacene:polystyrene blend as the active layer and poly­(4-vinylphenol)/HfO2 as the hybrid gate dielectric. The fabricated devices exhibited excellent p-channel characteristics with a maximum and av field effect mobility of 0.44 and 0.22(±0.11) cm2 V–1 s–1, respectively, av threshold voltage of 0.021(±0.63) V, and current on–off ratio of ∼105 while operating at −10 V. These devices exhibited remarkable stability under effects of gate bias stress and large number of repeated transfer scans with negligible performance spread. In addition, these devices displayed very stable electrical characteristics after long exposure periods to humidity and an excellent shelf life of more than 6 months in ambient environment. Thermal stress at high temperatures however deteriorates the device characteristics because of the generation and propagation of cracks in the active semiconductor crystals. Furthermore, novel paper-based phototransistors have been demonstrated with these devices.