Effects of Random Domains on the Zero Hall Plateau in the Quantum Anomalous Hall Effect

Recently, a zero Hall conductance plateau with random domains was experimentally observed in the quantum anomalous Hall (QAH) effect. We study the effects of random domains on the zero Hall plateau in QAH insulators. We find that the structure inversion symmetry determines the scaling property of th...

Full description

Saved in:
Bibliographic Details
Published in:Physical review letters 2019-01, Vol.122 (2), p.026601-026601, Article 026601
Main Authors: Chen, Chui-Zhen, Liu, Haiwen, Xie, X C
Format: Article
Language:English
Subjects:
Critical point
Domains
Insulators
Quantum Hall effect
Resistance
Scaling
Subsystems
Symmetry
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Recently, a zero Hall conductance plateau with random domains was experimentally observed in the quantum anomalous Hall (QAH) effect. We study the effects of random domains on the zero Hall plateau in QAH insulators. We find that the structure inversion symmetry determines the scaling property of the zero Hall plateau transition in the QAH systems. In the presence of structure inversion symmetry, the zero Hall plateau state shows a quantum-Hall-type critical point, originating from the two decoupled subsystems with opposite Chern numbers. However, the absence of structure inversion symmetry leads to a mixture between these two subsystems, gives rise to a line of critical points, and dramatically changes the scaling behavior. Hereinto, we predict a Berezinskii-Kosterlitz-Thouless-type transition during the Hall conductance plateau switching in the QAH insulators. Our results are instructive for both theoretic understanding of the zero Hall plateau transition and future transport experiments in the QAH insulators.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.122.026601