Direct Evidence of Ion-Migration-Induced Degradation of Ultrabright Perovskite Light-Emitting Diodes

• Published in: ACS applied materials & interfaces 2019-03, Vol.11 (12), p.11667-11673
• Main Authors: Lee, Hyunho, Ko, Donghyun, Lee, Changhee
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.8b22217

Low operational lifetime is a critical issue in perovskite light-emitting diodes. The forward-bias currents for light emission accelerate device degradation, which needs to be identified and understood to be able to improve the device stability. Here, we systematically analyze the degradation mechanism of perovskite light-emitting diodes (PeLEDs) fabricated with a sequential deposition method that produce a compact and pinhole-free perovskite film. The device exhibits an efficient green electroluminescence (peak wavelength at 533 nm and full width at half-maximum of 22 nm) with a maximum luminance of more than 67 000 cd/m2. The lifetime, however, is quite short; under the constant current bias for an initial luminance of 1000 cd/m2, the decay time to reach half of the initial luminance is approximately 13 min. Dark spots are created and enlarged as a result of perovskite film deterioration and ion migration. By investigating morphological changes in the perovskite films and the amount of ion accumulation under the Al electrode for the unoperated, T 50 (luminance decay to 50% of the initial value), and T 10 (luminance decay to 10% of the initial value) devices, we propose a degradation mechanism for PeLEDs. The ion migration from the perovskite layer experienced electrochemical interactions with the Al electrode, causing device degradation.