Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

The microscopic origins and technological impact of 1/ f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequency current noise spectra revealed that the main...

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Bibliographic Details
Published in:Nanoscale 2019-03, Vol.11 (11), p.4719-4725
Main Authors: Sánta, Botond, Balogh, Zoltán, Gubicza, Agnes, Pósa, László, Krisztián, Dávid, Mihály, György, Csontos, Miklós, Halbritter, András
Format: Article
Language:English
Subjects:
Crossovers
Dependence
Filaments
Noise
Noise levels
Noise spectra
Solid electrolytes
Switching
Variations
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Summary:The microscopic origins and technological impact of 1/ f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequency current noise spectra revealed that the main electronic noise contribution arises from the resistance fluctuations due to internal dynamical defects of Ag nanofilaments. The resulting 0.01-1% current noise ratio, i.e. the total noise level with respect to the mean value of the current, is found to be universal: its magnitude only depends on the total resistance of the device, irrespective of the materials aspects of the surrounding solid electrolyte and of the specific filament formation procedure. Moreover, the resistance dependence of the current noise ratio also displays the diffusive to ballistic crossover, confirming that stable resistive switching operation utilizing Ag nanofilaments is not compromised even in truly atomic scale junctions by technologically impeding noise levels. We demonstrate the universal 1/ f type current noise in Ag based, nanofilamentary resistive switches which arises from internal resistance fluctuations.
ISSN:2040-3364
2040-3372
DOI:10.1039/c8nr09985e