Near-infrared modulation by means of GeTe/SOI-based metamaterial

Today, nanophotonics still lacks components for modulation that can be easily implementable in existing silicon-on-insulator (SOI) technology. Chalcogenide phase change materials (PCMs) are promising candidates for tuning in the near infrared: at the nanoscale, thin layers can provide enough contras...

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Bibliographic Details
Published in:Optics letters 2019-03, Vol.44 (6), p.1508-1511
Main Authors: Petronijevic, E, Leahu, G, Di Meo, V, Crescitelli, A, Dardano, P, Coppola, G, Esposito, E, Rendina, I, Miritello, M, Grimaldi, M G, Torrisi, V, Compagnini, G, Sibilia, C
Format: Article
Language:English
Subjects:
Crystallization
Infrared analysis
Metamaterials
Modulation
Nanorods
Numerical analysis
Phase change materials
Silicon
SOI (semiconductors)
Thin films
Unit cell
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Summary:Today, nanophotonics still lacks components for modulation that can be easily implementable in existing silicon-on-insulator (SOI) technology. Chalcogenide phase change materials (PCMs) are promising candidates for tuning in the near infrared: at the nanoscale, thin layers can provide enough contrast to control the optical response of a nanostructure. Moreover, all-dielectric metamaterials allow for resonant behavior without having ohmic losses in the telecom range. Here, a novel hybridization of a SOI-based metamaterial with PCM GeTe is experimentally investigated. A metamaterial based on Si nanorods, covered by a thin layer of GeTe, is designed and fabricated. Switching GeTe from amorphous to crystalline leads to a rather high resonance-governed reflection contrast at 1.55 μm. Additional confocal Raman imaging is done to differentiate the crystallized zones of the metamaterials' unit cell. The findings are in good agreement with numerical analysis and show good perspectives of all-dielectric tunable near-infrared nanophotonics.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.44.001508