An electrically driven structural phase transition in single Ag2Te nanowire devices

Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the tempera...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale 2019-01, Vol.11 (14), p.6629-6634
Main Authors: Premasiri, Kasun, Zheng, Wei, Xu, Biao, Ma, Tao, Zhou, Lin, Wu, Yue, Gao, Xuan P A
Format: Article
Language:English
Subjects:
Electronic devices
Low voltage
Memory devices
Nanotechnology devices
Nanowires
Ohmic dissipation
Phase change materials
Phase transitions
Resistance
Resistance heating
Silver compounds
Tellurides
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Exploring new phase-change materials is instrumental in the progression of electronic memory devices. Ag2Te with its reversible structural phase transition, and in the form of nanowires, has become an apt candidate for potential use in nanoscale memory devices. Here, we report a study on the temperature- or electrically-driven phase change properties of crystalline Ag2Te nanowires. We first demonstrate that this structural phase change can be achieved via heating up the nanowires, which results in a sharp drop in conductance. Then we show that a DC voltage (
ISSN:2040-3364
2040-3372
DOI:10.1039/c8nr10000d