Intrinsic AM noise in singly tuned IMPATT diode oscillators

Analytical relationships are derived for the ratio of the intrinsic AM to FM noise, and for the intrinsic AM noise of IMPATT diode oscillators. The theory is confirmed experimentally for a silicon n + -p diode and an n-gallium-arsenide Schottky barrier diode operating at low and intermediate signal...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1973-08, Vol.20 (8), p.752-754
Main Author: Goedbloed, J.J.
Format: Article
Language:English
Online Access:Get full text
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Summary:Analytical relationships are derived for the ratio of the intrinsic AM to FM noise, and for the intrinsic AM noise of IMPATT diode oscillators. The theory is confirmed experimentally for a silicon n + -p diode and an n-gallium-arsenide Schottky barrier diode operating at low and intermediate signal levels.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1973.17738