Memristor in a Reservoir SystemExperimental Evidence for High-Level Computing and Neuromorphic Behavior of PbI2

Lead halides in an asymmetric layered structure form memristive devices which are controlled by the electronic structure of the PbX2|metal interface. In this paper, we explain the mechanism that stands behind the I–V pinched hysteresis loop of the device and shortly present its synaptic-like plastic...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2019-05, Vol.11 (18), p.17009-17018
Main Authors: Wlaźlak, E, Marzec, M, Zawal, P, Szaciłowski, K
Format: Article
Language:English
Online Access:Get full text
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Summary:Lead halides in an asymmetric layered structure form memristive devices which are controlled by the electronic structure of the PbX2|metal interface. In this paper, we explain the mechanism that stands behind the I–V pinched hysteresis loop of the device and shortly present its synaptic-like plasticity (spike-timing-dependent plasticity and spike-rate-dependent plasticity) and nonvolatile memory effects. This memristive element was incorporated into a reservoir system, in particular, the echo-state network with delayed feedback, which exhibits brain-like recurrent behavior and demonstrates metaplasticity as one of the available learning mechanisms. It can serve as a classification system that classifies input signals according to their amplitude.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.9b01841