Hierarchical fabrication Z-scheme photocatalyst of BiVO4 (0 4 0)-Ag@CdS for enhanced photocatalytic properties under simulated sunlight irradiation

[Display omitted] Interfacial charge separation and heterojunction system are conductive to improving its photocatalytic performance. Herein, we designed a novel photocatalyst of Z-scheme BiVO4 (0 4 0)-Ag@CdS, in which Ag was photo-deposition on the (0 4 0) facets of BiVO4 as the “linker” between Bi...

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Bibliographic Details
Published in:Journal of colloid and interface science 2019-07, Vol.548, p.293-302
Main Authors: Xue, Yongtao, Wu, Zhansheng, He, Xiufang, Li, Qing, Yang, Xia, Li, Lianmeng
Format: Article
Language:English
Subjects:
BiVO4 (0 4 0)-Ag@CdS
Facet effect
H2O2
Photodegradation
Z-scheme
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Summary:[Display omitted] Interfacial charge separation and heterojunction system are conductive to improving its photocatalytic performance. Herein, we designed a novel photocatalyst of Z-scheme BiVO4 (0 4 0)-Ag@CdS, in which Ag was photo-deposition on the (0 4 0) facets of BiVO4 as the “linker” between BiVO4 and CdS. Characterizations of XRD and SEM clearly revealed that the BiVO4 (0 4 0)-Ag@CdS was prepared through hierarchical fabrication. The photoelectrochemical performances demonstrated BiVO4 with high proportion (0 4 0) facet and CdS with nanorods structure could drastically improve the photocatalytic performance. Then, the 100%BiVO4 (0 4 0)-Ag@CdS presented an excellent photodegradation rate towards tetracycline hydrochloride, which is 8.67 times than that of single BiVO4. In addition, the results of light assisted Fenton-like oxidation revealed that the 100%BiVO4 (0 4 0)-Ag@CdS performed the highest photodegradation rate towards 2, 4-dichlorophenoxyacetic acid with the assist of 12 mM H2O2 under the irradiation of simulated sunlight, and the photodegradation pathway was analyzed through GC-MS. This contribution provides a novel insight for improving the separation efficiency of photoelectron-hole pair and photodegradate towards refractory organic pollutants.
ISSN:0021-9797
1095-7103
DOI:10.1016/j.jcis.2019.04.043