Structural perfection of the GeSi and SiGe heteroepitaxial systems

• Published in: Thin solid films 1974-07, Vol.22 (3), p.221-229
• Main Authors: Vasilevskaya, V.N., Datsenko, L.I., Osadchaya, N.V., Prokopenko, I.V., Soldatenko, N.N., Tkhorik, Yu.A.
• Format: Article
• Language: English
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(74)90293-4

The structural perfection of heteroepitaxial systems (HESs) of the SiGe type (germanium films deposited onto silicon substrates) and of the “reverse” type (Si films on Ge substrates) has been investigated by X-ray diffraction and metallographical methods. It has been found that the real structures of these HESs are very different. The fragmentation previously observed in the SiGe HES is not found in the reverse system, but thick Ge substrates ( d Ge ∼ 1 mm) appear to be plastically deformed throughout their thickness. A mutual correspondence of the damaged areas, inherent in the fragmentary structure (FS) in the SiGe system, is absent in the reverse system. Annealing does not influence the SiGe HES. The nature of the FS and the peculiarities of the deformation of both systems are discussed.