High-Speed Silicon-Germanium Electronics

Electronic devices that outperform traditional silicon technology yet remain compatible with standard manufacturing methods have been developed. An alloy of silicon and germanium can form the basis of exceptionally high speed transistors.

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Bibliographic Details
Published in:Scientific American 1994-03, Vol.270 (3), p.62-67
Main Author: Meyerson, Bernard S.
Format: Magazinearticle
Language:English
Subjects:
Alloys
Applied sciences
Atoms
Electric current
Electronics
Electrons
Epitaxy
Exact sciences and technology
Germanium
Materials
Microelectronic fabrication (materials and surfaces technology)
Microelectronics
Polymers
R&D
Research & development
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon
Technology
Transistors
Vapor deposition
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Description
Summary:Electronic devices that outperform traditional silicon technology yet remain compatible with standard manufacturing methods have been developed. An alloy of silicon and germanium can form the basis of exceptionally high speed transistors.
ISSN:0036-8733
1946-7087
DOI:10.1038/scientificamerican0394-62