Hole transport and charge relaxation in irradiated SiO2 MOS capacitors

The transient response of SiO2 gate-insulator MOS capacitors to pulsed electron-beam irradiation is studied. The time and temperature dependence of the radiation-induced flatband voltage shift is measured and coupled with corresponding measurements of transferred charge. Results indicate that transp...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1975-12, Vol.NS-22, p.2163-2167
Main Authors: BOESCH, H E, J R, McLean, F B, McGarrity, J M, AUSMAN, G A, J R
Format: Article
Language:English
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Summary:The transient response of SiO2 gate-insulator MOS capacitors to pulsed electron-beam irradiation is studied. The time and temperature dependence of the radiation-induced flatband voltage shift is measured and coupled with corresponding measurements of transferred charge. Results indicate that transport of radiation-produced holes through the oxide is responsible for the relaxation of the majority of the initial postirradiation flatband voltage shift. The measured response is dominated by hole transport and trapping in the SiO2 film. The results are explained in terms of a stochastic hopping model of hole transport in the oxide layer, based on a continuous-time random walk.
ISSN:0018-9499
DOI:10.1109/TNS.1975.4328098