Memory Switching in Aluminum-Aluminum Oxide-Aluminum Thin Film Devices

In thin (300-1500 A.) Al-Al2O3-Al films, the stable low-frequency (60 Hz) voltage-current characteristics obtained in the high-resistivity state (off-state) depended on the electrode area (A). By increasing the peak-to-peak value of the applied sinusoidal voltage beyond a certain threshold (Vth), sw...

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Bibliographic Details
Published in:Journal of solid state chemistry 1975-01, Vol.12 (3-4), p.293-293
Main Authors: Schmidt, Pierre E, Davila, Cruz, Esqueda, Paul, Callarotti, Roberto
Format: Article
Language:English
Online Access:Get full text
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Summary:In thin (300-1500 A.) Al-Al2O3-Al films, the stable low-frequency (60 Hz) voltage-current characteristics obtained in the high-resistivity state (off-state) depended on the electrode area (A). By increasing the peak-to-peak value of the applied sinusoidal voltage beyond a certain threshold (Vth), switching to a highly conductive (20-60 ohms) state (on-state) occurred, the on-resistance (Ron) of which did not depend on A; Ron increased with increasing temperature, indicating its metallic nature. By applying a high-voltage (about 50 V) pulse (less than 5 microsec), the switch was returned to its original off-state. Since Vth did not decrease on repeated cycling, the metallic filaments were probably dissolved completely each time.--CA.
ISSN:0022-4596