Ion-induced migration of Cu into Si

Ion bombardment of Cu-contaminated Si surfaces with either 20-keV Ne+ or 800-eV Ar+ ions leads to enhanced migration of Cu into the bulk of the Si to depths comparable to the projected range of the incident ions. The migration proceeds sufficiently rapidly to prevent sputter removal of submonolayer...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1975-05, Vol.46 (5), p.1947-1951
Main Authors: Hart, R. R., Dunlap, H. L., Marsh, O. J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ion bombardment of Cu-contaminated Si surfaces with either 20-keV Ne+ or 800-eV Ar+ ions leads to enhanced migration of Cu into the bulk of the Si to depths comparable to the projected range of the incident ions. The migration proceeds sufficiently rapidly to prevent sputter removal of submonolayer amounts of Cu even though as much as 100 Å of the substrate is sputtered away. The enhanced migration is probably caused by defect production during the slowing down of the incident ions. The depth distribution of the Cu following Ne+ or Ar+ bombardments was determined from backscattered energy spectra of 280-keV α particles.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.321871