Ion-induced migration of Cu into Si

Ion bombardment of Cu-contaminated Si surfaces with either 20-keV Ne+ or 800-eV Ar+ ions leads to enhanced migration of Cu into the bulk of the Si to depths comparable to the projected range of the incident ions. The migration proceeds sufficiently rapidly to prevent sputter removal of submonolayer...

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Published in:Journal of applied physics 1975-05, Vol.46 (5), p.1947-1951
Main Authors: Hart, R. R., Dunlap, H. L., Marsh, O. J.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c283t-72440327620c5bcdb5f7ad4fe5e320aaa07508e793982e1f179bacc29923d9a13
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container_end_page 1951
container_issue 5
container_start_page 1947
container_title Journal of applied physics
container_volume 46
creator Hart, R. R.
Dunlap, H. L.
Marsh, O. J.
description Ion bombardment of Cu-contaminated Si surfaces with either 20-keV Ne+ or 800-eV Ar+ ions leads to enhanced migration of Cu into the bulk of the Si to depths comparable to the projected range of the incident ions. The migration proceeds sufficiently rapidly to prevent sputter removal of submonolayer amounts of Cu even though as much as 100 Å of the substrate is sputtered away. The enhanced migration is probably caused by defect production during the slowing down of the incident ions. The depth distribution of the Cu following Ne+ or Ar+ bombardments was determined from backscattered energy spectra of 280-keV α particles.
doi_str_mv 10.1063/1.321871
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source AIP Digital Archive
title Ion-induced migration of Cu into Si
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