Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2‑Based Resistive Random Access Memory: From Device to Nanoscale Characterization

• Published in: ACS applied materials & interfaces 2019-07, Vol.11 (26), p.23659-23666
• Main Authors: Vescio, Giovanni, Martín, Gemma, Crespo-Yepes, Albert, Claramunt, Sergi, Alonso, Daniel, López-Vidrier, Julian, Estradé, Sonia, Porti, Marc, Rodríguez, Rosana, Peiró, Francesca, Cornet, Albert, Cirera, Albert, Nafría, Montserrat
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.9b01731

Low-power, high-performance metal–insulator–metal (MIM) non-volatile resistive memories based on HfO2 high-k dielectric are fabricated using a drop-on-demand inkjet printing technique as a low-cost and eco-friendly method. The characteristics of resistive switching of Pt (bottom)/HfO2/Ag (top) stacks on Si/SiO2 substrates are investigated in order to study the bottom electrode’s interaction with the HfO2 dielectric layer and the resulting effects on resistive switching. The devices show low Set and Reset voltages, high ON/OFF current ratio, and relatively low switching current (∼1 μA), which are comparable to the characteristics of current commercial CMOS memories. In order to understand the resistive switching mechanism, direct structural observation is carried out by field-emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM) on cross-sectioned samples prepared by focused ion beam (FIB). In addition, electron energy loss spectroscopy (EELS) inspections discard a silver electro-migration effect.