A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPE

The phenomenon of “meniscus lines” on the surfaces of liquid phase epitaxial layers of GaAs is described, and it is shown that these are associated with a “stick-slip” motion of the edge of the liquid as it is removed from the surface. Mechanisms which may account for the creation of this phenomenon...

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Bibliographic Details
Published in:Journal of crystal growth 1975-09, Vol.30 (2), p.257-266
Main Authors: Small, M.B., Blakeslee, A.E., Shih, K.K., Potemski, R.M.
Format: Article
Language:English
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Summary:The phenomenon of “meniscus lines” on the surfaces of liquid phase epitaxial layers of GaAs is described, and it is shown that these are associated with a “stick-slip” motion of the edge of the liquid as it is removed from the surface. Mechanisms which may account for the creation of this phenomenon are postulated.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(75)90097-4