Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedback

Separate-confinement heterostructure injection lasers with periodic corrugations in the optical cavity were prepared by a hybrid liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) growth process. The N-Al0.3Ga0.7As, N-Al0.12Ga0.88As, p-GaAs active layer, and P-Al0.12Ga0.88As layers were gro...

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Published in:Applied physics letters 1975-08, Vol.27 (3), p.142-144
Main Authors: Casey, H. C., Somekh, S., Ilegems, M.
Format: Article
Language:English
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Summary:Separate-confinement heterostructure injection lasers with periodic corrugations in the optical cavity were prepared by a hybrid liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) growth process. The N-Al0.3Ga0.7As, N-Al0.12Ga0.88As, p-GaAs active layer, and P-Al0.12Ga0.88As layers were grown by LPE, a 0.3748-μm periodic corrugation was ion milled into the P-Al0.12Ga0.88As layer, and then the P-Al0.3Ga0.7As and p-GaAs top layers were grown over the corrugation by MBE. The temperature dependence of the lasing wavelength between 12.6 and 24.8 °C demonstrated the behavior expected for a distributed-feedback laser. The threshold current density was 2.2 kA/cm2 at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.88385