Activation energy for electrotransport in thin aluminum films by resistance measurements

The activation energy for electrotransport in thin aluminum films was measured by a resistometric technique involving several individual resistance measurements along the stripe. An equation was derived which relates the rate of resistance change to the ion velocity. A thin film thermocouple which i...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 1976, Vol.37 (1), p.73-80
Main Authors: Hummel, R.E., Dehoff, R.T., Geier, H.J.
Format: Article
Language:English
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Summary:The activation energy for electrotransport in thin aluminum films was measured by a resistometric technique involving several individual resistance measurements along the stripe. An equation was derived which relates the rate of resistance change to the ion velocity. A thin film thermocouple which is free of any loss of heat was used to monitor the temperature of the stripe. This thermocouple was calibrated by the melting points of pure metals placed on the film. The activation energy for electrotransport in thin aluminum films was found to be temperature dependent and to vary between 0.45 and 0.72 eV in a temperature range between 220 and 360°C. The average ion velocity in the grain boundaries due to electrotransport was found to be around 10 −7 cm sec in agreement with the literature.
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(76)90183-9