High-temperature oxidation of SiC in a glow-discharge oxygen plasma

The oxidation kinetics and structure of the oxide scales formed on high-density SiC were studied in molecular oxygen at 740 torr and in a glow-discharge oxygen plasma at 0.1 torr at temperatures of 1000, 1100, and 1200 C. The monatomic oxygen formed by the glow discharge markedly increased the react...

Full description

Saved in:
Bibliographic Details
Published in:Oxidation of metals 1976-04, Vol.10 (2), p.97-103
Main Authors: Lavrenko, V. A., Pomytkin, A. P., Lugovskaya, E. S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c260t-fc8fcbe42883c22799a54a0a3d10fb6ef42eff416c8b9f0975a90b862bb816643
cites cdi_FETCH-LOGICAL-c260t-fc8fcbe42883c22799a54a0a3d10fb6ef42eff416c8b9f0975a90b862bb816643
container_end_page 103
container_issue 2
container_start_page 97
container_title Oxidation of metals
container_volume 10
creator Lavrenko, V. A.
Pomytkin, A. P.
Lugovskaya, E. S.
description The oxidation kinetics and structure of the oxide scales formed on high-density SiC were studied in molecular oxygen at 740 torr and in a glow-discharge oxygen plasma at 0.1 torr at temperatures of 1000, 1100, and 1200 C. The monatomic oxygen formed by the glow discharge markedly increased the reaction rate and the vaporization of some of the oxidation products. The marked differences in kinetics suggest that the rate-controlling step during oxidation in molecular oxygen is the dissociation of adsorbed diatomic oxygen to the monatomic species. Films formed in molecular oxygen were mostly amorphous SiO2 with small inclusions of SiC and graphite, whereas films formed in dissociated oxygen were primarily amorphous SiO2 containing SiO, Si2O3, and the coesite form of SiO2.
doi_str_mv 10.1007/BF00614239
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_22607162</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22607162</sourcerecordid><originalsourceid>FETCH-LOGICAL-c260t-fc8fcbe42883c22799a54a0a3d10fb6ef42eff416c8b9f0975a90b862bb816643</originalsourceid><addsrcrecordid>eNpFkEtLAzEYRYMoWKsbf0FWLoTol0fzWOpgrVBwoYK7IZMm08i8TKZo_70jFVzdzeHey0HoksINBVC390sASQXj5gjN6EJxIrQ2x2gGwIEoBe-n6CznD4AJZ2aGilWst2T07eCTHXfJ4_47buwY-w73Ab_EAscOW1w3_RfZxOy2NtW_0L72HR4am1t7jk6CbbK_-Ms5els-vBYrsn5-fCru1sQxCSMJTgdXecG05o4xZYxdCAuWbyiESvogmA9BUOl0ZQIYtbAGKi1ZVWkqpeBzdHXoHVL_ufN5LNvpkG8a2_l-l0s2zSgq2QReH0CX-pyTD-WQYmvTvqRQ_noq_z3xH1rAWd4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>22607162</pqid></control><display><type>article</type><title>High-temperature oxidation of SiC in a glow-discharge oxygen plasma</title><source>SpringerLink Online Journals Archive Complete</source><creator>Lavrenko, V. A. ; Pomytkin, A. P. ; Lugovskaya, E. S.</creator><creatorcontrib>Lavrenko, V. A. ; Pomytkin, A. P. ; Lugovskaya, E. S.</creatorcontrib><description>The oxidation kinetics and structure of the oxide scales formed on high-density SiC were studied in molecular oxygen at 740 torr and in a glow-discharge oxygen plasma at 0.1 torr at temperatures of 1000, 1100, and 1200 C. The monatomic oxygen formed by the glow discharge markedly increased the reaction rate and the vaporization of some of the oxidation products. The marked differences in kinetics suggest that the rate-controlling step during oxidation in molecular oxygen is the dissociation of adsorbed diatomic oxygen to the monatomic species. Films formed in molecular oxygen were mostly amorphous SiO2 with small inclusions of SiC and graphite, whereas films formed in dissociated oxygen were primarily amorphous SiO2 containing SiO, Si2O3, and the coesite form of SiO2.</description><identifier>ISSN: 0030-770X</identifier><identifier>EISSN: 1573-4889</identifier><identifier>DOI: 10.1007/BF00614239</identifier><language>eng</language><ispartof>Oxidation of metals, 1976-04, Vol.10 (2), p.97-103</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c260t-fc8fcbe42883c22799a54a0a3d10fb6ef42eff416c8b9f0975a90b862bb816643</citedby><cites>FETCH-LOGICAL-c260t-fc8fcbe42883c22799a54a0a3d10fb6ef42eff416c8b9f0975a90b862bb816643</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lavrenko, V. A.</creatorcontrib><creatorcontrib>Pomytkin, A. P.</creatorcontrib><creatorcontrib>Lugovskaya, E. S.</creatorcontrib><title>High-temperature oxidation of SiC in a glow-discharge oxygen plasma</title><title>Oxidation of metals</title><description>The oxidation kinetics and structure of the oxide scales formed on high-density SiC were studied in molecular oxygen at 740 torr and in a glow-discharge oxygen plasma at 0.1 torr at temperatures of 1000, 1100, and 1200 C. The monatomic oxygen formed by the glow discharge markedly increased the reaction rate and the vaporization of some of the oxidation products. The marked differences in kinetics suggest that the rate-controlling step during oxidation in molecular oxygen is the dissociation of adsorbed diatomic oxygen to the monatomic species. Films formed in molecular oxygen were mostly amorphous SiO2 with small inclusions of SiC and graphite, whereas films formed in dissociated oxygen were primarily amorphous SiO2 containing SiO, Si2O3, and the coesite form of SiO2.</description><issn>0030-770X</issn><issn>1573-4889</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1976</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLAzEYRYMoWKsbf0FWLoTol0fzWOpgrVBwoYK7IZMm08i8TKZo_70jFVzdzeHey0HoksINBVC390sASQXj5gjN6EJxIrQ2x2gGwIEoBe-n6CznD4AJZ2aGilWst2T07eCTHXfJ4_47buwY-w73Ab_EAscOW1w3_RfZxOy2NtW_0L72HR4am1t7jk6CbbK_-Ms5els-vBYrsn5-fCru1sQxCSMJTgdXecG05o4xZYxdCAuWbyiESvogmA9BUOl0ZQIYtbAGKi1ZVWkqpeBzdHXoHVL_ufN5LNvpkG8a2_l-l0s2zSgq2QReH0CX-pyTD-WQYmvTvqRQ_noq_z3xH1rAWd4</recordid><startdate>197604</startdate><enddate>197604</enddate><creator>Lavrenko, V. A.</creator><creator>Pomytkin, A. P.</creator><creator>Lugovskaya, E. S.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>197604</creationdate><title>High-temperature oxidation of SiC in a glow-discharge oxygen plasma</title><author>Lavrenko, V. A. ; Pomytkin, A. P. ; Lugovskaya, E. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-fc8fcbe42883c22799a54a0a3d10fb6ef42eff416c8b9f0975a90b862bb816643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1976</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Lavrenko, V. A.</creatorcontrib><creatorcontrib>Pomytkin, A. P.</creatorcontrib><creatorcontrib>Lugovskaya, E. S.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Oxidation of metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lavrenko, V. A.</au><au>Pomytkin, A. P.</au><au>Lugovskaya, E. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-temperature oxidation of SiC in a glow-discharge oxygen plasma</atitle><jtitle>Oxidation of metals</jtitle><date>1976-04</date><risdate>1976</risdate><volume>10</volume><issue>2</issue><spage>97</spage><epage>103</epage><pages>97-103</pages><issn>0030-770X</issn><eissn>1573-4889</eissn><abstract>The oxidation kinetics and structure of the oxide scales formed on high-density SiC were studied in molecular oxygen at 740 torr and in a glow-discharge oxygen plasma at 0.1 torr at temperatures of 1000, 1100, and 1200 C. The monatomic oxygen formed by the glow discharge markedly increased the reaction rate and the vaporization of some of the oxidation products. The marked differences in kinetics suggest that the rate-controlling step during oxidation in molecular oxygen is the dissociation of adsorbed diatomic oxygen to the monatomic species. Films formed in molecular oxygen were mostly amorphous SiO2 with small inclusions of SiC and graphite, whereas films formed in dissociated oxygen were primarily amorphous SiO2 containing SiO, Si2O3, and the coesite form of SiO2.</abstract><doi>10.1007/BF00614239</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0030-770X
ispartof Oxidation of metals, 1976-04, Vol.10 (2), p.97-103
issn 0030-770X
1573-4889
language eng
recordid cdi_proquest_miscellaneous_22607162
source SpringerLink Online Journals Archive Complete
title High-temperature oxidation of SiC in a glow-discharge oxygen plasma
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T12%3A40%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-temperature%20oxidation%20of%20SiC%20in%20a%20glow-discharge%20oxygen%20plasma&rft.jtitle=Oxidation%20of%20metals&rft.au=Lavrenko,%20V.%20A.&rft.date=1976-04&rft.volume=10&rft.issue=2&rft.spage=97&rft.epage=103&rft.pages=97-103&rft.issn=0030-770X&rft.eissn=1573-4889&rft_id=info:doi/10.1007/BF00614239&rft_dat=%3Cproquest_cross%3E22607162%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c260t-fc8fcbe42883c22799a54a0a3d10fb6ef42eff416c8b9f0975a90b862bb816643%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=22607162&rft_id=info:pmid/&rfr_iscdi=true