Millimeter IMPATT Sources for the 130-170-GHz Range

Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator output having an AM double-side-band noise-to-signal ratio of -115 dB per 1 kHz beyond 70 kHz from carrier.

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1976-11, Vol.24 (11), p.738-743
Main Authors: Weller, K.P., Ying, R.S., Lee, D.H.
Format: Article
Language:English
Subjects:
Aerospace electronics
Copper
Current density
Doping profiles
Fabrication
Light emitting diodes
Millimeter wave devices
Silicon
Substrates
Temperature
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Description
Summary:Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator output having an AM double-side-band noise-to-signal ratio of -115 dB per 1 kHz beyond 70 kHz from carrier.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1976.1128954