Millimeter IMPATT Sources for the 130-170-GHz Range

Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator output having an AM double-side-band noise-to-signal ratio of -115 dB per 1 kHz beyond 70 kHz from carrier.

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Published in:IEEE transactions on microwave theory and techniques 1976-11, Vol.24 (11), p.738-743
Main Authors: Weller, K.P., Ying, R.S., Lee, D.H.
Format: Article
Language:English
Subjects:
Aerospace electronics
Copper
Current density
Doping profiles
Fabrication
Light emitting diodes
Millimeter wave devices
Silicon
Substrates
Temperature
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description Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator output having an AM double-side-band noise-to-signal ratio of -115 dB per 1 kHz beyond 70 kHz from carrier.
doi_str_mv 10.1109/TMTT.1976.1128954
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source IEEE Electronic Library (IEL) Journals
subjects Aerospace electronics
Copper
Current density
Doping profiles
Fabrication
Light emitting diodes
Millimeter wave devices
Silicon
Substrates
Temperature
title Millimeter IMPATT Sources for the 130-170-GHz Range
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