Recombination-Enhanced Annealing of the E1 and E2 Defect Levels in 1 MeV Electron-Irradiated n-GaAs

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Bibliographic Details
Published in:Journal of applied physics 1976-08, Vol.47 (8), p.3587-3591
Main Authors: Lang, D V, Kimerling, L C, Leung, S Y
Format: Article
Language:English
Online Access:Get full text
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ISSN:0021-8979
DOI:10.1063/1.323161