Application of stochastic hopping transport to hole conduction in amorphous SiO2

Charge relaxation in MIS capacitors, employing a thin film of amorphous SiO2 as the gate insulator, was studied as a function of time and temperature following exposure to a pulsed 12-MeV electron beam. The results can be explained by rapid transport of the radiation-generated electrons to the elect...

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Bibliographic Details
Published in:Journal of applied physics 1976-04, Vol.47 (4), p.1529-1532
Main Authors: McLean, F. B., Ausman, G. A., Boesch, H. E., McGarrity, J. M.
Format: Article
Language:English
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Summary:Charge relaxation in MIS capacitors, employing a thin film of amorphous SiO2 as the gate insulator, was studied as a function of time and temperature following exposure to a pulsed 12-MeV electron beam. The results can be explained by rapid transport of the radiation-generated electrons to the electrodes followed by a much slower temperature-activated transport of the holes, which dominates the charge relaxation at observable times. It is shown that a stochastic transport model based on a continuous time random walk provides a good description of the data.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.322767