Theoretical calculations of electron mobility in ternary III-V compounds

Theoretical calculations have been made of the electron mobility in several ternary III-V semiconductor systems. The scattering mechanisms included in the analysis are polar-optical-phonon scattering, piezoelectric scattering, alloy scattering, and ionized-impurity scattering. Models are also presen...

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Bibliographic Details
Published in:Journal of applied physics 1976-01, Vol.47 (1), p.292-300
Main Authors: Harrison, J. W., Hauser, J. R.
Format: Article
Language:English
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Summary:Theoretical calculations have been made of the electron mobility in several ternary III-V semiconductor systems. The scattering mechanisms included in the analysis are polar-optical-phonon scattering, piezoelectric scattering, alloy scattering, and ionized-impurity scattering. Models are also presented and discussed for the variations of material parameters with alloy composition which are needed in the mobility calculations.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.322315