Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

A device with the lateral structure of Ag|MnOx|Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and...

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Bibliographic Details
Published in:Chemical communications (Cambridge, England) England), 2019, Vol.55 (67), p.9915-9918
Main Authors: Zhou, Guangdong, Sun, Bai, Ren, Zhijun, Wang, Lidan, Xu, Cunyun, Wu, Bo, Li, Ping, Yao, Yanqing, Duan, Shukai
Format: Article
Language:English
Subjects:
Ambience
Logic circuits
Memristors
Moisture
Nanorods
Resistors
Reversion
Online Access:Get full text
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Summary:A device with the lateral structure of Ag|MnOx|Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.
ISSN:1359-7345
1364-548X
DOI:10.1039/c9cc04069b