Composition, structure, and ac conductivity of rf-sputtered calcia-stabilized zirconia thin films

Thin 12 mole% calcia-stabilized zirconia CSZ films (500–17 000 Å) were deposited by rf sputtering onto single-crystal silicon substrates. When deposited in an oxygen-containing plasma (more than 0.2% O2 in Kr), such films appeared to be stoichiometric, as verified by nuclear microanalysis; while the...

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Bibliographic Details
Published in:Journal of applied physics 1977-01, Vol.48 (2), p.775-780
Main Authors: Croset, M., Schnell, J. P., Velasco, G., Siejka, J.
Format: Article
Language:English
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Summary:Thin 12 mole% calcia-stabilized zirconia CSZ films (500–17 000 Å) were deposited by rf sputtering onto single-crystal silicon substrates. When deposited in an oxygen-containing plasma (more than 0.2% O2 in Kr), such films appeared to be stoichiometric, as verified by nuclear microanalysis; while their structure, analyzed by x rays, appeared to be of the fluorite type. The ac conductivity measured on Al/CSZ/Si structures between 200 and 400 °C suggests an activation energy and a preexponential factor close to that of bulk-sintered material having the same composition. This result tends to prove that conductivity in sputtered CSZ thin films is due to anion-oxygen movement. Preliminary emf measurements on Pt/O2/CSZ/Ni/Si thin-film galvanic cells confirmed this interpretation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.323669