Diffusion and Incorporation of Aluminum in Silicon

Aluminum is used as a p-type dopant in the manufacture of high-power devices. The results of thermodynamic and experimental studies of the Al-Si-H-O system are discussed. Reaction with the quartz wall and moisture in the closed tube diffusion of Al causes the source to oxidize and reduces the Al par...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1977-05, Vol.124 (5), p.762-766
Main Authors: Rai‐Choudhury, P., Selim, F. A., Takei, W. J.
Format: Article
Language:English
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Summary:Aluminum is used as a p-type dopant in the manufacture of high-power devices. The results of thermodynamic and experimental studies of the Al-Si-H-O system are discussed. Reaction with the quartz wall and moisture in the closed tube diffusion of Al causes the source to oxidize and reduces the Al partial pressure. Solutions to these problems are discussed. Heat treatment of diffused wafers under various temperature-time conditions followed by Hall effect and resistivity measurements are performed to study possible formation of donor complexes. 10 ref.--AA.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2133402