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Cast polycrystalline silicon Schottky-barrier solar cells
Measurements have been made of the electrical and optical properties of polycrystalline metal-insulator-semiconductor Schottky-barrier solar cells (MIS SBSC’s) formed by the evaporation of aluminum onto Wacker ’’Silso’’ cast p-type silicon substrates. Results show that consistently high AM1 efficien...
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Published in: | Applied physics letters 1977-10, Vol.31 (7), p.471-472 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Measurements have been made of the electrical and optical properties of polycrystalline metal-insulator-semiconductor Schottky-barrier solar cells (MIS SBSC’s) formed by the evaporation of aluminum onto Wacker ’’Silso’’ cast p-type silicon substrates. Results show that consistently high AM1 efficiencies of over 8% may be achieved using this material and that the V-I characteristics are stable over the period of testing. The short-circuit current of these devices (∼22 mA cm−2) indicates that grain-boundary recombinationn is not a serious problem. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.89744 |