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Cast polycrystalline silicon Schottky-barrier solar cells

Measurements have been made of the electrical and optical properties of polycrystalline metal-insulator-semiconductor Schottky-barrier solar cells (MIS SBSC’s) formed by the evaporation of aluminum onto Wacker ’’Silso’’ cast p-type silicon substrates. Results show that consistently high AM1 efficien...

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Bibliographic Details
Published in:Applied physics letters 1977-10, Vol.31 (7), p.471-472
Main Authors: Lillington, D. R., Townsend, W. G.
Format: Article
Language:English
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Summary:Measurements have been made of the electrical and optical properties of polycrystalline metal-insulator-semiconductor Schottky-barrier solar cells (MIS SBSC’s) formed by the evaporation of aluminum onto Wacker ’’Silso’’ cast p-type silicon substrates. Results show that consistently high AM1 efficiencies of over 8% may be achieved using this material and that the V-I characteristics are stable over the period of testing. The short-circuit current of these devices (∼22 mA cm−2) indicates that grain-boundary recombinationn is not a serious problem.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.89744