Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy

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Bibliographic Details
Published in:Journal of crystal growth 1977-04, Vol.38 (1), p.85-92
Main Authors: Kotani, Tsuyoshi, Ueda, Osamu, Akita, Kenzo, Nishitani, Yorimitsu, Kusunoki, Toshihiro, Ryuzan, Osamu
Format: Article
Language:English
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ISSN:0022-0248
DOI:10.1016/0022-0248(77)90377-3