1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy

Direct epitaxial growth of O-band InAs/GaAs quantum-dot laser on Si substrates has been rapidly developing over the past few years. But most of current methodologies are not fully compatible with silicon-on-insulator (SOI) technology, which is the essential platform for silicon photonic devices. By...

Full description

Saved in:
Bibliographic Details
Published in:Optics express 2019-07, Vol.27 (14), p.19348-19358
Main Authors: Zhang, Bin, Wei, Wen-Qi, Wang, Jian-Huan, Zhang, Jie-Yin, Cong, Hui, Feng, Qi, Wang, Ting, Zhang, Jian-Jun
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Direct epitaxial growth of O-band InAs/GaAs quantum-dot laser on Si substrates has been rapidly developing over the past few years. But most of current methodologies are not fully compatible with silicon-on-insulator (SOI) technology, which is the essential platform for silicon photonic devices. By implementing an in situ III-V/Si hybrid growth technique with (111)-faceted Si hollow structures, we demonstrate the first optically pumped InAs/GaAs quantum-dot microdisk laser on SOI substrates grown by molecular beam epitaxy (MBE). The microdisk laser on SOI is characterized with threshold pump power as low as 0.39 mW and a Q factor of 3900 at room temperature. Additionally, the compared device performance of InAs quantum-dot microdisk lasers on GaAs, Si (001) and SOI are simultaneously studied with identical epi-structures.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.27.019348