A.c. conduction in pyrolytically deposited silicon nitride films at low frequencies

A.c. conductivity measurements were performed on pyrolytically grown Si sub 3N sub 4 over a frequency range 10 exp -2-10 exp -3 Hz. p- and n-type Si were subjected to intense chemical and treatment before deposition of a 100-150 nm thick Si sub 3N sub 4 layer the reaction between SiH sub 4 and NH su...

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Bibliographic Details
Published in:Thin solid films 1978-06, Vol.51 (3), p.L41-L43
Main Author: Nazar, Fateh Mohammad
Format: Article
Language:English
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Summary:A.c. conductivity measurements were performed on pyrolytically grown Si sub 3N sub 4 over a frequency range 10 exp -2-10 exp -3 Hz. p- and n-type Si were subjected to intense chemical and treatment before deposition of a 100-150 nm thick Si sub 3N sub 4 layer the reaction between SiH sub 4 and NH sub 3 at 850 to 950 deg C. All showed similar behaviour. A typical conductivity /frequency curve for films in the form of A1/Si sub 3N sub 4/Si/Al capacitors had a slope approx. capacity and loss being almost frequency-independent. Graphs generally gave empirical relation sigma varies as W exp n with n slightly below or equal to unity. Measurements did not reflect the series capacitance of the Si barrier. Hopping conduction was the probable explanation for the observed conductivity/frequency relation. 26 ref.--E.J.S.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(78)90285-7