The effect of Al-GaAs interaction on the technology of self-aligned gallium arsenide MESFETs

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Bibliographic Details
Published in:Solid-state electronics 1982-01, Vol.25 (12), p.1206-1209
Main Authors: Singh, B.R., Daga, O.P., Kochhar, Madhu, Khokle, W.S.
Format: Article
Language:English
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ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(82)90082-X