Proton channeling into the Si substrate at the bottom of ultrahigh-aspect-ratio contact holes during plasma etching

Etching-induced physical damage at the bottom of ultrahigh-aspect-ratio contact holes was investigated by transmission electron microscopy, and a characteristic hemispherical lattice disorder was discovered in the Si substrate. Depth profiles of impurities in this disordered region were analyzed by...

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Bibliographic Details
Published in:Thin solid films 2000-10, Vol.374 (2), p.228-234
Main Authors: Ichimori, Takashi, Ikegami, Naokatsu, Hirashita, Norio, Kanamori, Jun
Format: Article
Language:English
Subjects:
Applied sciences
Contact hole
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Ion channeling
Lithography, masks and pattern transfer
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Plasma etching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SIMS
Surface cleaning, etching, patterning
Surface treatments
TEM
Ultra-high-aspect
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Summary:Etching-induced physical damage at the bottom of ultrahigh-aspect-ratio contact holes was investigated by transmission electron microscopy, and a characteristic hemispherical lattice disorder was discovered in the Si substrate. Depth profiles of impurities in this disordered region were analyzed by secondary ion mass spectrometry, and it was found that this phenomenon is characteristic only for hydrogen-containing plasma. The mechanism of such damage formation is explained by proton (H +) channeling into the substrate at the ultrahigh-aspect-ratio contact hole bottom.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(00)01154-8