A kinetics scheme for the XeF laser

A kinetics scheme is described for electron-beam excitation of the XeF laser in a neon diluent. Both Ne+ and Ne* channels contribute significantly to the formation of the upper laser level. In each chain an important Penning ionization process leads to the formation of Xe+, which is the major interm...

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Bibliographic Details
Published in:Applied physics letters 1978-07, Vol.33 (2), p.148-151
Main Authors: Finn, T. G., Palumbo, L. J., Champagne, L. F.
Format: Article
Language:English
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Summary:A kinetics scheme is described for electron-beam excitation of the XeF laser in a neon diluent. Both Ne+ and Ne* channels contribute significantly to the formation of the upper laser level. In each chain an important Penning ionization process leads to the formation of Xe+, which is the major intermediary in forming the upper laser level. Xe+2 is found to be the dominant absorber of laser radiation. The effect of the weakly bound XeF ground state is discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.90287