Exciton and Impurity Electroabsorption in GaSe sub x Te sub 1--x < Sn > Single Crystals

Exciton and impurity electroabsorption has been studied in GaSe sub x Te sub 1--x < Sn > (0.7 < = x < = 1) exhibiting the properties of residual conductivity (RC). It has been shown that the broadening of the negative exciton peak, the nature of the field dependence of the electroabsorpt...

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Bibliographic Details
Published in:Solid state communications 1982-05, Vol.42 (7), p.481-483
Main Authors: Tagiev, B G, Bagirzade, E F
Format: Article
Language:English
Online Access:Get full text
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Summary:Exciton and impurity electroabsorption has been studied in GaSe sub x Te sub 1--x < Sn > (0.7 < = x < = 1) exhibiting the properties of residual conductivity (RC). It has been shown that the broadening of the negative exciton peak, the nature of the field dependence of the electroabsorption signal, and its anisotropy in the exciton and impurity region are associated with the presence of internal chaotic fields E sub int approx = 10 exp 3 -10 exp 4 V cm exp --1 coming into play because of the fluctuating distribution of the tin impurity and the defects inherent in layer crystals. Based on investigations of the impurity electroabsorption (IEA), the depth of occurrence (h nu = 1.18 eV) and the concentration (N = 10 exp 16 ) of impurity centres have been determined. 19 ref.--AA
ISSN:0038-1098