Krypton entrapment in pulse-biased sputter-deposited metals

A supported gas discharge sputtering system was constructed to investigate krypton entrapment in high rate sputter-deposited thick films. Krypton entrapment was studied as a function of substrate and target voltage for nickel, aluminum, titanium and iron deposits. Control of the substrate and target...

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Bibliographic Details
Published in:Thin solid films 1978-11, Vol.54 (3), p.327-336
Main Authors: Bayne, M.A., Moss, R.W., Mcclanahan, E.D.
Format: Article
Language:English
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Summary:A supported gas discharge sputtering system was constructed to investigate krypton entrapment in high rate sputter-deposited thick films. Krypton entrapment was studied as a function of substrate and target voltage for nickel, aluminum, titanium and iron deposits. Control of the substrate and target voltages was achieved with pulse circuits capable of adjusting the pulse duration and repetition rate. A water-cooled cylindrical copper substrate 15 cm in diameter was used to collect the sputtered metal from a cylindrical target 9 cm in diameter. To observe the immediate effect of changes in the sputtering parameters on gas trapping, as well as to measure the total gas trapped, a sensitive mass flow indicator was installed in the krypton supply of the dynamically pumped system. Data relating krypton content to substrate bias conditions and deposition rate are discussed. Krypton contents of more than 2 at.% were found in the metals studied, all of which were deposited at rates exceeding 1 nm s -1.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(78)90392-9