Low-Energy-Consumption Three-Valued Memory Device Inspired by Solid-State Batteries

We report the creation of a low-energy-consumption three-valued memory device based on the switching of open-circuit voltages. This device consists of a stack of Li, Li3PO4 solid electrolyte, and Ni electrode films. We observed reversible voltage switching between high, intermediate, and low open-ci...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2019-12, Vol.11 (48), p.45150-45154
Main Authors: Watanabe, Yuki, Kobayashi, Shigeru, Sugiyama, Issei, Nishio, Kazunori, Liu, Wei, Watanabe, Satoshi, Shimizu, Ryota, Hitosugi, Taro
Format: Article
Language:English
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Summary:We report the creation of a low-energy-consumption three-valued memory device based on the switching of open-circuit voltages. This device consists of a stack of Li, Li3PO4 solid electrolyte, and Ni electrode films. We observed reversible voltage switching between high, intermediate, and low open-circuit voltages. According to the scaling law, the energy required to switch a device is estimated to be 8.8 × 10–11 J/μm2 and this value is almost 1/50 of that of a typical dynamic random access memory. Both the high- and low-voltage states converged to the intermediate-voltage state, indicating that the intermediate-voltage state is the most stable metastable state.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.9b15366