Minority-Carrier-Lifetime Determination in Hg sub 0.68Cd sub 0.32Te

Values for the electron minority-carrier lifetime tau sub n in Hg sub 0.68Cd sub 0.32Te photodiodes were independently determined by two indirect techniques. Measurements of the junction resistance under zero bias at 210 deg K yield tau sub n = 2.3 x 10 exp --7 s, and diffusion length measurements g...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1978-12, Vol.49 (12), p.6182-6184
Main Authors: Lanir, M, Vanderwyck, A H B, Wang, C C
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Values for the electron minority-carrier lifetime tau sub n in Hg sub 0.68Cd sub 0.32Te photodiodes were independently determined by two indirect techniques. Measurements of the junction resistance under zero bias at 210 deg K yield tau sub n = 2.3 x 10 exp --7 s, and diffusion length measurements give tau sub n = 2.9 x 10 exp --7 s. These results are in agreement with calculations for radiative lifetime in p-type Hg sub 0.68Cd sub 0.32Te. Similar measurements on Au-doped material a lifetime shorter by almost three orders of magnitude, and it is suggested that this is due to recombination associated with Shockley--Read centers.14 refs.--AA
ISSN:0021-8979