Electric and Light Dual-Gate Tunable MoS2 Memtransistor

• Published in: ACS applied materials & interfaces 2019-11, Vol.11 (46), p.43344-43350
• Main Authors: Yin, Siqi, Song, Cheng, Sun, Yiming, Qiao, Leilei, Wang, Bolun, Sun, Yufei, Liu, Kai, Pan, Feng, Zhang, Xiaozhong
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.9b14259

Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor with two-dimensional (2D) materials. The gate tunability of resistive switching in 2D memtransistor enables the multifunctional modulation and promising applications in neuromorphic network. However, the tunability of switching ratio in 2D memtransistor remains small and seriously limits its practical application. Here, we investigate a memtransistor based on a 3-layer MoS2 and realize the electric, light, and their combined modulations. In the electric gate mode, switching ratio is tunable in a large scale in the range 100–105. In the light gate mode, a maximum conductance change of 450% can be obtained by increasing the light power. Moreover, the switching ratio can be further improved to ∼106 through a combination of electric and light dual gating. Such a gating effect can be ascribed to the modulation of carrier density in the MoS2 channel. Our work provides a simple approach for achieving a high-performance multifunctional memtransistor.