Vapour phase hetero-epitaxy: Growth of GaInAs layers

A method of vapour growth of III-V ternary compounds is described. A thermodynamic delineation of the system is given and the control of the ternary composition discussed. The argument can easily be extended to cover quaternary or higher compounds. We describe an experimental syatem for growing Ga x...

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Bibliographic Details
Published in:Journal of crystal growth 1982-01, Vol.56 (3), p.591-604
Main Authors: Chatterjee, A.K., Faktor, M.M., Lyons, M.H., Moss, R.H.
Format: Article
Language:English
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Summary:A method of vapour growth of III-V ternary compounds is described. A thermodynamic delineation of the system is given and the control of the ternary composition discussed. The argument can easily be extended to cover quaternary or higher compounds. We describe an experimental syatem for growing Ga x In 1- x As lattice matched to InP, in which the growth rate is continously monitored with an electrobalance. The results of growth rate studies are interpreted using a model in which surface and gas-transport processes are coupled. Sulphur doped, n-type Ga 0.47In 0.53As (room temperature carrier concentration down to 6 × 10 14 cm -3) has been successfully grown for p-i-n photodetectors.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(82)90042-2