10-nm linewidth electron beam lithography on GaAs

Metal features with 10-nm linewidths were produced on thick GaAs substrates using electron beam lithography. A single layer of polymethylmethacrylate (PMMA) was exposed by an approximately 2-nm-diam electron beam with energies ranging from 20 to 120 keV. Gold-palladium lines less than 20 nm wide, an...

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Bibliographic Details
Published in:Applied physics letters 1983-01, Vol.42 (1), p.38-40
Main Authors: Craighead, H. G., Howard, R. E., Jackel, L. D., Mankiewich, P. M.
Format: Article
Language:English
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Summary:Metal features with 10-nm linewidths were produced on thick GaAs substrates using electron beam lithography. A single layer of polymethylmethacrylate (PMMA) was exposed by an approximately 2-nm-diam electron beam with energies ranging from 20 to 120 keV. Gold-palladium lines less than 20 nm wide, and 15 nm thick, with center-to-center spacings of 70 nm, were produced over 15-μm square fields at all electron beam energies by lift off. The exposure latitude increased significantly for higher electron energies, with 10-nm-wide metal lines formed using a 120-keV writing beam.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93757