High pressure measurements on photopumped low threshold Al sub(x)Ga sub(1-x)As quantum well lasers

Data are presented on the continuous (cw) 300 K photopumped laser operation of a low threshold Al sub(x')Ga sub(1-x')As-GaAs(x' similar to 0.30) single quantum well heterostructure (quantum well size L sub(z) similar to 60 angstrom) subjected to high pressure (0-11 kbar) in a simple o...

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Bibliographic Details
Published in:Journal of applied physics 1983-01, Vol.54 (8), p.4386-4389
Main Authors: Camras, M D, Holonyak, N Jr, Coleman, J J, Drickamer, H G, Burnham, R D, Streifer, W, Scifres, D R, Lindstroem, C, Paoli, T P
Format: Article
Language:English
Online Access:Get full text
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Summary:Data are presented on the continuous (cw) 300 K photopumped laser operation of a low threshold Al sub(x')Ga sub(1-x')As-GaAs(x' similar to 0.30) single quantum well heterostructure (quantum well size L sub(z) similar to 60 angstrom) subjected to high pressure (0-11 kbar) in a simple opposed anvil apparatus. Beyond similar to 11 kbar where the central Al sub(x')Ga sub(1-x')As waveguide region undergoes a direct-indirect transition, and the waveguide confinement begins to weaken and deep levels tend to become important, the laser threshold increases rapidly and "quenches" cw 300 K operation. Pulsed 300 K photopumped laser operation of an undoped 121-period Al sub(x)Ga sub(1-x)As-GaAs(x similar to 0.5) superlattice in the pressure range from 0-11 kbar is shown for reference.
ISSN:0021-8979