High quality refractory Josephson tunnel junctions utilizing thin aluminum layers

Preparation of high quality all-refractory Josephson tunnel junctions based on Nb/Al-oxide-Nb and Nb/Al-oxide-Al/Nb structures is reported. Critical currents up to 1300 A/cm2 and Vm values up to 35 mV were obtained. The specific capacitance of these junctions is 0.06±0.02 pF/μm2. Junctions were fabr...

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Bibliographic Details
Published in:Applied physics letters 1983-03, Vol.42 (5), p.472-474
Main Authors: Gurvitch, M., Washington, M. A., Huggins, H. A.
Format: Article
Language:English
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Summary:Preparation of high quality all-refractory Josephson tunnel junctions based on Nb/Al-oxide-Nb and Nb/Al-oxide-Al/Nb structures is reported. Critical currents up to 1300 A/cm2 and Vm values up to 35 mV were obtained. The specific capacitance of these junctions is 0.06±0.02 pF/μm2. Junctions were fabricated using standard photolithography and a new plasma etching process coupled with anodization of Nb.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93974