Growth of dislocation-free bulk silicon crystals

The aim of the review is to discuss (a) various known methods for the growth of Si crystals from melt and (b) the mechanisms of the formation and the techniques for the elimination of dislocations during growth. 81 ref.--AA

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Bibliographic Details
Published in:Progress in crystal growth and characterization 1983, Vol.6 (1), p.25-46
Main Authors: Bagai, R.K., Borle, W.N.
Format: Article
Language:English
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Summary:The aim of the review is to discuss (a) various known methods for the growth of Si crystals from melt and (b) the mechanisms of the formation and the techniques for the elimination of dislocations during growth. 81 ref.--AA
ISSN:0146-3535
DOI:10.1016/0146-3535(83)90023-0