Electroabsorption by stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structures

We report the first observation of electroabsorption in GaAs/GaAlAs multiple quantum well structures. We have been able to induce Stark shifts for room-temperature exciton resonances of ∼10 meV for applied field ∼1.6×104 V/cm in a sample with 96-Å GaAs layers, giving large changes in optical absorpt...

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Bibliographic Details
Published in:Applied physics letters 1983-05, Vol.42 (10), p.864-866
Main Authors: CHEMLA, D. S, DAMEN, T. C, MILLER, D. A. B, GOSSARD, A. C, WIEGMANN, W
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We report the first observation of electroabsorption in GaAs/GaAlAs multiple quantum well structures. We have been able to induce Stark shifts for room-temperature exciton resonances of ∼10 meV for applied field ∼1.6×104 V/cm in a sample with 96-Å GaAs layers, giving large changes in optical absorption (e.g., a factor of 5 or ∼4×103 cm−1 increase). This should permit optical modulators with micron path lengths and potentially very fast operation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93794