Microanalytical investigation of sintered SiC: Part 2 Study of the grain boundaries of sintered SiC by high resolution Auger electron spectroscopy

UHV-fracture surfaces of different (B, C)- and (Al, C)-doped pressureless sintered SiC materials are investigated by using high resolution Auger electron spectroscopy (HRAES). The grain boundaries at intergranular fractured regions of (B. C)-doped materials are evidently free of any enrichment of im...

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Bibliographic Details
Published in:Journal of materials science 1983-10, Vol.18 (10), p.3154-3160
Main Authors: Hamminger, R., Grathwohl, G., Th mmler, F.
Format: Article
Language:English
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Summary:UHV-fracture surfaces of different (B, C)- and (Al, C)-doped pressureless sintered SiC materials are investigated by using high resolution Auger electron spectroscopy (HRAES). The grain boundaries at intergranular fractured regions of (B. C)-doped materials are evidently free of any enrichment of impurity elements or sintering additives. In contrast, the (Al, C)-doped materials reveal the existence of thin Al-containing grain boundary films. Sputtering indicates their thickness to be less than 1 nm. The concentrations of the elements segregated in the grain boundary films are determined.
ISSN:0022-2461
1573-4803
DOI:10.1007/BF00700800