Light-induced effect in GaAs MESFETs

In this paper the possibility of using GaAs MESFETs under Schottky gate illumination for photodetection and switching has been experimentally demonstrated. Semitransparent Au metallization is used for Schottky gate formation. The results discussed here provide experimental support to the behaviour p...

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Bibliographic Details
Published in:Infrared physics 1983-01, Vol.23 (5), p.235-237
Main Authors: Chaturvedi, G.J., Gulati, R., Trivedi, P.L., Chandra, G., Sharma, H.S., Chandra, I., Sharma, B.L.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In this paper the possibility of using GaAs MESFETs under Schottky gate illumination for photodetection and switching has been experimentally demonstrated. Semitransparent Au metallization is used for Schottky gate formation. The results discussed here provide experimental support to the behaviour predicted for such configurations.
ISSN:0020-0891
DOI:10.1016/0020-0891(83)90070-2