Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition

High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C2H5)3Ga with NH3. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after comp...

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Bibliographic Details
Published in:Applied physics letters 1983-03, Vol.42 (5), p.430-432
Main Authors: Khan, M A, Skogman, R A, Schulze, R G, Gershenzon, M
Format: Article
Language:English
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Summary:High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C2H5)3Ga with NH3. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after compensating the background donor concentration (typically ND ∼1×1019 cm−3) with Be+ or N+ implants. These Schottky barriers were electrically and optically characterized.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93953